BENCHERIF, Hichem (2020) Modeling and simulation of power MOSFETs based on 4H-SiC. Doctoral thesis, Université de Batna 2.
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Abstract
Exploring the attractive electrical properties of the Silicon Carbide (SiC) for power devices, the analysis of 4H-SiC MOSFETs is the main topic of this Ph.D document. In particular, the thesis concerns the investigation using numerical and analytical, physics based models, for accurately replicating the power MOSFET behavior. At the present, the fabrication of SiC devices with the given performances is not completely obvious. This fact is due to the lack of knowledge still existing in parameters related to SiO2/4H-SiC interfacial region and the sensitivity of some physical parameters to temperature changes. Therefore, a set of investigative tools, designed especially for SiC devices, cannot be regarded as secondary objective. Following this need, in our research activity firstly predictive, numerical and analytical models, including temperature dependence, are used. This models able to explain the carrier transport in diffused regions and turns also useful for better understanding the influence of physical parameters, which depend in a significant way from the processed material, on device performances. These models are then assumed as objective functions in MOGA to determine the optimized physical and geometrical device parameters for a specific application. The models include also the device characterization at high temperatures to analyze the influence of thermal issues on the overall behavior up to temperature of 250°C. Secondly, with the aim to properly account for a realistic device, a combined model of both defect energy levels inside the 4H-SiC bandgap (deep and tail centers) and oxide-fixed traps has been incorporated in a more general, self-consistent model, allowing the analysis of the device behavior under the temperature and carrier-trapping effects. Finally, with the imposition of right physical models, it is possible to use the versatility of the 2D Silvaco tool for extending the analysis and obtaining a physical insight on theeffect of a non-uniform p-base doping concentration and the high K materials properties in determining the fundamental 4H-SiC MOSFET figure of merits, both in blocking and forward current regime (i.e. blocking voltage, threshold voltage, channel mobility, drain current, and on-state resistance).
| Item Type: | Thesis (Doctoral) |
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| Subjects: | Technologie > Electronique |
| Divisions: | Faculté de technologie > Département d'électronique |
| Date Deposited: | 28 Jun 2020 12:05 |
| Last Modified: | 28 Jun 2020 12:05 |
| URI: | http://eprints.univ-batna2.dz/id/eprint/1840 |
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